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| APTDF100H120G Diode Full Bridge Power Module + AC1 AC2 VRRM = 1200V IC = 100A @ Tc = 60C Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features * * * * * * * Benefits AC2 - Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration * * * * * * * + - AC1 Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM IF(A V) IF(RMS) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% TC = 25C TC = 60C TC = 45C TC = 45C Max ratings 1200 120 100 135 500 Unit V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF100H120G - Rev 1 June, 2006 RMS Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 8.3ms A APTDF100H120G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM CT Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Test Conditions IF = 100A IF = 150A IF = 100A Tj = 125C Tj = 25C VR = 1200V Tj = 125C VR = 1200V Min Typ 2.4 2.7 1.8 Max 3 Unit V 100 500 110 A pF Dynamic Characteristics Symbol Characteristic trr trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions IF=1A,VR=30V di/dt = 100A/s Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C IF = 100A VR = 800V di/dt=1000A/s Tj = 125C Min Typ 45 385 480 1055 5240 6 19 210 9.4 70 Max Unit ns ns nC A ns C A IF = 100A VR = 800V di/dt = 200A/s Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 2.5 Typ Max 0.55 175 125 100 4.7 160 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 www.microsemi.com 2-4 APTDF100H120G - Rev 1 June, 2006 APTDF100H120G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 300 IF, Forward Current (A) 250 200 150 100 T J=-55C TJ=125C T J=175C 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse Trr vs. Current Rate of Charge 600 500 400 300 200 100 0 0 200 400 600 800 1000 1200 -diF/dt (A/s) IRRM vs. Current Rate of Charge 50 A 150 A 100 A T J=125C VR=800V 50 0 0.0 0.5 1.0 1.5 2.0 TJ=25C 2.5 3.0 3.5 VF, Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge TJ=125C VR=800V IRRM, Reverse Recovery Current (A) 12 10 8 6 4 2 80 70 60 50 40 30 20 10 0 200 400 600 800 1000 1200 -diF/dt (A/s) TJ=125C VR=800V 150 A 100 A 50 A 150 A 100 A 50 A 0 200 400 600 800 1000 1200 -diF/dt (A/s) Capacitance vs. Reverse Voltage 800 700 C, Capacitance (pF) 600 Max. Average Forward Current vs. Case Temp. 140 120 100 IF(AV) (A) Duty Cycle = 0.5 T J=175C 500 400 300 200 100 0 1 10 100 VR, Reverse Voltage (V) 1000 60 40 20 0 0 25 50 75 100 125 150 175 Case Temperature (C) www.microsemi.com 3-4 APTDF100H120G - Rev 1 June, 2006 80 APTDF100H120G SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF100H120G - Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein June, 2006 |
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